NXP Demonstrates Energy Efficient RF Base Station Amplifier

Semiconductor firm, NXP has unveiled what it says is the world’s most efficient 3-way Doherty amplifier, enabling a new standard of energy efficient RF base stations. Based on a novel concept, the Doherty circuit performs at efficiency levels in excess of 47%, at an average power output of 48dBm, a gain of 15dB and peak to average ratio of 8dB for a multicarrier W-CDMA signal. The current design covers the W-CDMA standard for band I operation. The design is tailored towards high yield, minimum tuning, volume manufacturing.

“With the innovative 3-way Doherty concept, we uniquely combined the advantages of the Doherty amplifier with our Doherty-optimized seventh generation LDMOS technology to deliver the highest efficiency levels and good pre-distort ability, while providing significant cost savings,” says Mark Murphy, Director of marketing for RF power products, NXP Semiconductors. “We developed the Doherty technology in direct response to customer demand for high efficiency amplifiers in emerging cellular standards, such as LTE. This way, we significantly lower the total system power consumption by achieving record power efficiency and performance,” concludes Murphy.

NXP’s 3-way LDMOS Doherty amplifier is now available for sampling.

Posted to the site on 4th June 2009